高电压技术2025，Vol.51Issue(2)：876-889,14.DOI:10.13336/j.1003-6520.hve.20231640
考虑米勒电容分层耗尽的数据手册驱动型SiC MOSFET模型
Datasheet-driven SiC MOSFET Model Considering Multi-layer Depletion of Miller Capacitance
摘要
Abstract
With the increasing market of silicon carbide metal-oxide-silicon field effect transistor(SiC MOSFET),the need of the fast and accurate device model for circuit simulation is continuously growing.However,the existing models have several limitations,including the trade-off between the high accuracy of I-U characteristic and high convergency,as well as the large deviation of Miller capacitance modeling in the low drain-source voltage UDS region.In order to address these issues,a datasheet-driven SiC MOSFET model considering multi-layer depletion of miller capacitance is proposed.First,the current source model from literature is revised based on the non-segmented functions,which improves the accu-racy of I-U characteristic.Then,based on the analysis of the multi-layer depletion process,a novel miller capacitance model is proposed,which covers the C-U characteristic in the whole UDS range.The model parameters can be fully ex-tracted through the datasheet,according to the proposed methods and procedures.Moreover,the influence of parameter variation on the dynamic waveforms is analyzed in detail.A commercial SiC MOSFET C3M0021120D is used to study the effectiveness of the proposed model.The static tests and dynamic double pulse tests are conducted,and the results are compared to the simulation results on the platform of LTspice.The results show that the maximum prediction error of the proposed model is within 10%,which proves the validity of the proposed model and implies that this model has great po-tentials in SiC-based power electronics converter design and evaluation applications.关键词
器件建模/SiC MOSFET/收敛性/参数提取/米勒电容/静态特性/动态特性Key words
device modeling/SiC MOSFET/convergence/parameter extraction/miller capacitance/static characteristic/dynamic characteristic引用本文复制引用
王乐衡,孙凯,郑泽东,李驰,巫以凡,毕大强..考虑米勒电容分层耗尽的数据手册驱动型SiC MOSFET模型[J].高电压技术,2025,51(2):876-889,14.基金项目
国家电网有限公司科技项目(SGSNKY00KJJS2100291).Project supported by Science and Technology Project of SGCC(SGSNKY00KJJS2100291). （SGSNKY00KJJS2100291）
