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Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect

Zhiyuan Liu Haicheng Cao Xiao Tang Tingang Liu Yi Lu Zixian Jiang Na Xiao Xiaohang Li

光：科学与应用（英文版）2025，Vol.14Issue(2)：307-332,26.

光：科学与应用（英文版）2025，Vol.14Issue(2)：307-332,26.DOI:10.1038/s41377-025-01751-y

Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect

Zhiyuan Liu ¹Haicheng Cao ¹Xiao Tang ¹Tingang Liu ¹Yi Lu ¹Zixian Jiang ¹Na Xiao ¹Xiaohang Li¹

作者信息

1. Advanced Semiconductor Laboratory,Electrical and Computer Engineering Program,CEMSE Division,King Abdullah University of Science and Technology(KAUST),Thuwal 23955-6900,Kingdom of Saudi Arabia
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Zhiyuan Liu,Haicheng Cao,Xiao Tang,Tingang Liu,Yi Lu,Zixian Jiang,Na Xiao,Xiaohang Li..Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect[J].光：科学与应用（英文版）,2025,14(2):307-332,26.

基金项目

The authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01,Transition Award in Semiconductors,Award No.FCC/1/5939,Opportunity Fund URF/1/5557-01-01. （）

光：科学与应用（英文版）

ISSN：2095-5545

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