金刚石与磨料磨具工程2025，Vol.45Issue(1)：86-92,7.DOI:10.13394/j.cnki.jgszz.2024.0017
多晶金刚石片的机械磨抛工艺
Mechanical lapping and polishing process of polycrystalline diamond wafers
摘要
Abstract
Objectives:Diamond is a critical material potentially or already applied in infrared windows,electronic components and acoustic devices for its excellent optical transmittance,high eletron mobility and high breakdown voltage.Mechanical lapping is one of the mainstream methods for diamond planarization.However,it is more difficult to mechanically planarize polycrystalline diamond due to the grains and the boundaries which may lead to defects and internal stress release.Variable-parameter mechanical lapping are conducted on polycrystalline diamond to investigate the effects of abrasive grain size,lapping pressure and abrasive concentration on material removal rate(RMRR)and sur-face roughness Ra.Methods:A group of{100}polycrystalline diamond wafers are attached to a load plate with lapping fluid speed of 8 mL/min,rotational speed of 30 r/min and orbital speed of 45 r/min.The grain size(W7～W50),the con-centration of fluid(3%～6%)and the loading pressure(0.1～0.4 MPa)are tested for a reasonable process.A surface profiler is used to observe the morphology of three equal division points(800 μm×800 μm)on diamond surface along the diagonal of the 5 mm×5 mm×1 mm wafer.The average roughness are used to characterize the lapping effect.Results:It is found that the RMRR increases with the increase of grain size,reaching its maximum of 25.210 μm/h with grain size of W50 and Ra of 240 nm.But there appears micro cracks on diamond surface.The RMRR slightly increases as the grain concentration increases from 3%to 5%but decreases at concentration of 6%,varying around 11 μm/h.The MRR also increases from～8 μm/h to～17 μm/h as the lapping pressure increases from 0.1 MPa to 0.4 MPa.Con-versely,the surface roughness decrease from 240 nm to 100 nm with finer abrasive,which is a dominant factor affect-ing the surafce quality.The surface roughness also decreases first but increases then with higher lapping pressure and abrasive concentration.Conclusion:The optimal process parameters for polycrystalline diamond wafer are determined,namely the lapping pressure of 0.3 MPa,the abrasive grain size of W10 and the lapping fluid concentration of 4%,where the processed polycrytalline diamond wafer achieves the best surface quality of Ra～96 nm and a corresponding RMRR of 7.097 μm/h.关键词
金刚石/研磨液/机械研磨/研磨压力/磨粒Key words
diamond/lapping fluid/mechanical lapping/lapping pressure/abrasive grain分类
电子信息工程引用本文复制引用
李蛟,张晓秋,王紫光,张昕,张瑜..多晶金刚石片的机械磨抛工艺[J].金刚石与磨料磨具工程,2025,45(1):86-92,7.基金项目
国家自然科学基金(52175382,52375169) （52175382,52375169）
辽宁省自然科学基金博士科研启动基金(2021-BS-220,2023-BS-171). （2021-BS-220,2023-BS-171）
