金刚石与磨料磨具工程2025，Vol.45Issue(1)：102-112,11.DOI:10.13394/j.cnki.jgszz.2023.0273
超声作用下碳化硅CMP流场特性分析
Analysis of flow field characteristics of silicon carbide CMP under ultrasonic action
王泽晓 1叶林征 1祝锡晶 1刘瑶 1啜世达 1吕博洋 1王栋2
作者信息
- 1. 中北大学 机械工程学院,太原 038507||先进制造技术山西省重点实验室,太原 038507
- 2. 埃克塞特大学 环境科学与经济学院工程学系,埃克塞特 EX4 4QF,英国
- 折叠
摘要
Abstract
Objectives:Silicon carbide faces challenges such as low polishing efficiency and poor surface quality dur-ing processing.The ultrasonic-assisted CMP(UCMP)processing technology is used to smooth and non-destructive pol-ishing the SiC surface,and the influence of ultrasonic assistance on the CMP flow field is deeply investigated in order to improve the polishing effect of SiC.Methods:(1)COMSOL Multiphysics is used to conduct CFD simulation on the polishing flow field of the silicon carbide UCMP process,aiming to explore the influences of factors such as ultrasonic frequency,ultrasonic amplitude,and liquid film thickness on the polishing flow field.A model is constructed to study the polishing flow field characteristics under ultrasonic vibration,based on an achievable k-ε model to analyze the pol-ishing flow field characteristics under ultrasonic action.(2)The influences of ultrasonic frequency,ultrasonic amplitude,and liquid film thickness on velocity and pressure in the polishing flow field are studied by the finite element method.(3)The CMP and UCMP comparative experiments are conducted to compare the polishing effects of SiC wafers under the two processes.Results:The ultrasonic frequency has a significant impact on the flow field of the polishing solution,and it has a significant promoting effect on the flow field of the polishing solution.As the ultrasound frequency in-creases from 20 kHz to 40 kHz,the maximum velocity of the flow field increases from 324.10 m/s to 698.20 m/s,and the maximum pressure increases from 177.00 MPa to 1 580.00 MPa.Compared with CMP,the polishing quality of the SiC wafer after UCMP is better,with a minimum surface roughness Ra of 3.2 nm and a higher material removal rate of 324.23 nm/h.Conclusions:The UCMP process is used to process the SiC surface,and the positive effect of ultrasound-assisted polishing flow field is verified through theoretical analysis and experimental verification.The relationship between the ultrasonic frequency and the polishing flow field characteristics has been clarified,providing data support for further optimizing UCMP process parameters.The UCMP process has significant advantages in improving the pol-ishing quality and material removal rate of SiC,and is expected to be widely applied in the field of silicon carbide ma-terial processing.Further research can be conducted on the influence of other factors on the UCMP process effect to achieve more ideal processing results.关键词
超声辅助/碳化硅/流体动力学仿真/化学机械抛光Key words
ultrasound assisted/silicon carbide/fluid dynamics simulation/chemical mechanical polishing(CMP)分类
矿业与冶金引用本文复制引用
王泽晓,叶林征,祝锡晶,刘瑶,啜世达,吕博洋,王栋..超声作用下碳化硅CMP流场特性分析[J].金刚石与磨料磨具工程,2025,45(1):102-112,11.
