有色金属材料与工程2025，Vol.46Issue(1)：75-82,8.DOI:10.13258/j.cnki.nmme.20240323002
多孔GaN/Ga2O3异质结双波段紫外光探测器的制备及性能研究
Preparation and performance research of dual-band ultraviolet detector with porous GaN/Ga2O3 heterojunction
摘要
Abstract
A high-response ultraviolet detector containing porous GaN/β-Ga2O3 heterojunction has been prepared by using NaNO3 solution as etching solution,porous GaN etched by ultraviolet-assisted electrochemical method as substrate,and Ga2O3 deposited on GaN substrate by radio frequency magnetron sputtering method and annealed.The detector is capable of sensitive detection of short-wave ultraviolet and long-wave ultraviolet,and the dual-band detection performance can be achieved by adjusting the voltage.It has a photoresponsivity of 70 mA/W and a specific detectivity of 3.95×1012 Jones and shows a high light-to-dark current ratio(～103)when irradiated with 254 nm wavelength light at 2 V bias voltage,and a photoresponsivity of 260 mA/W when irradiated with 365 nm wavelength light at 25 V bias voltage.The porous GaN/β-Ga2O3 heterojunction detector exhibits excellent optoelectronic performance and will have a promising application in the direction of weak light detection as well as dual-band detection.关键词
GaN/电化学刻蚀/Ga2O3/紫外光探测器/双波段Key words
GaN/electrochemical etching/Ga2O3/ultraviolet detector/dual-band分类
电子信息工程引用本文复制引用
梁悦,王烁,郭佳宝,修慧欣..多孔GaN/Ga2O3异质结双波段紫外光探测器的制备及性能研究[J].有色金属材料与工程,2025,46(1):75-82,8.基金项目
上海市浦江人才计划资助项目(22PJD046) （22PJD046）
