摘要
Abstract
The CMOS image sensor is widely used in aerospace,medical imaging,industrial detection,milit-ary reconnaissance,and other fields.The laser interference and damage to CMOS image sensors have also become a research hotspot in related fields at home and abroad.To investigate the impact of pulsed laser on back-illuminated CMOS image sensors,we select the Sony IMX178 back-illuminated CMOS image sensor as the target.Based on the heat conduction equation,the finite element simulation software COMSOL Mul-tiphysics is used to compare and calculate the temperature distribution of the CMOS image sensor under the irradiation of single-pulse lasers with different parameters.The calculation results indicate that the point dam-age thresholds of the sensor under the effects of single-pulse lasers at 532 nm(1 ns),1064 nm(1 ns),532 nm(30 ps),and 1064 nm(30 ps)are respectively 61.12 mJ/cm2,75.76 mJ/cm2,31.83 mJ/cm2,and 37.43 mJ/cm2.Subsequently,an experimental study is conducted on the laser irradiation effects of back-illuminated CMOS image sensors.The experimental results demonstrate that the image sensor exhibits a lower damage threshold under the influence of 532 nm pulsed lasers compared to 1064 nm pulsed lasers;picosecond pulsed lasers,with higher peak power compared to nanosecond pulsed lasers,are more prone to causing point damage.The calculated point damage thresholds are highly consistent with the experimental results.关键词
纳秒脉冲激光/皮秒脉冲激光/热力效应/损伤阈值Key words
nanosecond pulse laser/picosecond pulse laser/thermal effect/damage threshold分类
电子信息工程
