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一种多衍生结构的新型荷控忆阻模拟器的设计和实现

徐有朋 付钱华 叶笑平

电子器件2025,Vol.48Issue(1):1-7,7.
电子器件2025,Vol.48Issue(1):1-7,7.DOI:10.3969/j.issn.1005-9490.2025.01.001

一种多衍生结构的新型荷控忆阻模拟器的设计和实现

Design and Realization of Novel Charge-Controlled Memristor Emulator with Multi-Derived Structure

徐有朋 1付钱华 1叶笑平1

作者信息

  • 1. 西华大学电气与电子信息学院,四川 成都 610039
  • 折叠

摘要

Abstract

An incremental charge-controlled memristor emulator is proposed,which is consisted of off-the-shelf devices to lower the cost in production and hardship in technology.Moreover,this memristor emulator(ME)which can be direct applied in circuit as same as or-dinary devices is a two-terminal circuit structure with input current equal to output and solves the problem that some MEs must be grounded when working.In addition,for enhancing application ability of ME,the decremental and pseudo-parallel memristor emulator have been also proposed.By the way,three kinds of MEs can realize mutual conversion through simple circuit change.According to the results of Pspice simulation and hardware testing,this emulator which has memristor characteristics can be realized by hardware and its v-i curve can be controlled in various ways.

关键词

忆阻器/增量型忆阻模拟器/二端电路/二端器件/忆阻器衍生结构

Key words

memristor/incremental memristor emulator/two-terminal circuit/two-terminal device/derived structure of memristor

分类

电子信息工程

引用本文复制引用

徐有朋,付钱华,叶笑平..一种多衍生结构的新型荷控忆阻模拟器的设计和实现[J].电子器件,2025,48(1):1-7,7.

基金项目

西华大学重点科研基金项目(Z201105) (Z201105)

电子器件

1005-9490

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