电子器件2025，Vol.48Issue(1)：15-19,5.DOI:10.3969/j.issn.1005-9490.2025.01.003
金属卤素钙钛矿场效管各向异性迁移率TCAD仿真
TCAD Simulation of Anisotropic Mobility in Metal Halide Perovskite Field-Effect Transistors
摘要
Abstract
TCAD software is used to simulate field-effect transistors(FETs)fabricated from low-cost and easy-to-process metal halide perovskite material CsPbBr3 and the influence of its anisotropic mobility on device performance is investigated.FETs are important com-ponents in integrated circuit fabrication,and their material selection and physical parameters direct determine the device performance and cost.It is found that at room temperature,CsPbBr3 material has similar electrical characteristics in[100]and[010]crystal direc-tions,while it differs in[001]direction.This result provides a reference for the potential application of this material in FET fabrication.关键词
金属卤素钙钛矿/各向异性迁移率/场效应管Key words
metal halide perovskite/anisotropic mobility/field-effect transistor分类
电子信息工程引用本文复制引用
杨帆,周贤中..金属卤素钙钛矿场效管各向异性迁移率TCAD仿真[J].电子器件,2025,48(1):15-19,5.基金项目
国家自然科学基金青年科学基金项目(61704032) （61704032）
