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The influence ofⅤ/Ⅲratio on electron mobility of the InAs_(x)Sb_(1-x)layers grown on GaAs substrate by molecular beam epitaxy

ZHANG Jing YANG Zhi ZHENG Li-Ming ZHU Xiao-Juan WANG Ping YANG Lin

红外与毫米波学报2025，Vol.44Issue(1)：P.25-32,8.

红外与毫米波学报2025，Vol.44Issue(1)：P.25-32,8.DOI:10.11972/j.issn.1001-9014.2025.01.004

The influence ofⅤ/Ⅲratio on electron mobility of the InAs_(x)Sb_(1-x)layers grown on GaAs substrate by molecular beam epitaxy

ZHANG Jing ¹YANG Zhi ¹ZHENG Li-Ming ²ZHU Xiao-Juan ¹WANG Ping ¹YANG Lin³

作者信息

1. School of Electronic Information and Artificial Intelligence,Shaanxi University of Science and Technology,Xi’an 710016,China
2. School of Mechanical and Electrical Engineering,Xi’an Traffic Engineering Institute,Xi’an 710300,China
3. School of Information Science and Engineering,Hebei University of Science and Technology,Shijiazhuang 050018,China
折叠

摘要

关键词

molecular beam epitaxy/InAs_(x)Sb_(1-x)/Ⅴ/Ⅲratio/high electron mobility

分类

信息技术与安全科学

引用本文复制引用

ZHANG Jing,YANG Zhi,ZHENG Li-Ming,ZHU Xiao-Juan,WANG Ping,YANG Lin..The influence ofⅤ/Ⅲratio on electron mobility of the InAs_(x)Sb_(1-x)layers grown on GaAs substrate by molecular beam epitaxy[J].红外与毫米波学报,2025,44(1):P.25-32,8.

基金项目

Supported by the Natural Science Basic Research Program of Shaanxi Province(2023-JC-QN-0758) （2023-JC-QN-0758）

Shaanxi University of Science and Technology Research Launch Project(2020BJ-26) （2020BJ-26）

Doctoral Research Initializing Fund of Hebei University of Science and Technology,China(1181476). （1181476）

红外与毫米波学报

OA北大核心

ISSN：1001-9014

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