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Correlation between the whole small recess offset and electrical performance of InP-based HEMTs

GONG Hang ZHOU Fu-Gui FENG Rui-Ze FENG Zhi-Yu LIU Tong SHI Jing-Yuan SU Yong-Bo JIN Zhi

红外与毫米波学报2025，Vol.44Issue(1)：P.40-45,6.

红外与毫米波学报2025，Vol.44Issue(1)：P.40-45,6.DOI:10.11972/j.issn.1001-9014.2025.01.006

Correlation between the whole small recess offset and electrical performance of InP-based HEMTs

GONG Hang ¹ZHOU Fu-Gui ¹FENG Rui-Ze ¹FENG Zhi-Yu ¹LIU Tong ²SHI Jing-Yuan ¹SU Yong-Bo ¹JIN Zhi¹

作者信息

1. High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China University of Chinese Academy of Sciences(UCAS),Beijing 100049,China
2. High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
折叠

摘要

关键词

InP high-electron-mobility transistor(InP HEMT)/InGaAs/InAlAs/DC/RF characteristic/smallsignal modeling/double-recessed gate process

分类

电子信息工程

引用本文复制引用

GONG Hang,ZHOU Fu-Gui,FENG Rui-Ze,FENG Zhi-Yu,LIU Tong,SHI Jing-Yuan,SU Yong-Bo,JIN Zhi..Correlation between the whole small recess offset and electrical performance of InP-based HEMTs[J].红外与毫米波学报,2025,44(1):P.40-45,6.

基金项目

Supported by the Terahertz Multi User RF Transceiver System Development Project(Z211100004421012). （Z211100004421012）

红外与毫米波学报

OA北大核心

ISSN：1001-9014

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