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Towards atomic-scale smooth surface manufacturing of β-Ga_(2)O_(3)via highly efficient atmospheric plasma etching

Yongjie Zhang Yuxi Xiao Jianwen Liang Chun Zhang Hui Deng

International Journal of Extreme Manufacturing2025，Vol.7Issue(1)：P.482-502,21.

International Journal of Extreme Manufacturing2025，Vol.7Issue(1)：P.482-502,21.DOI:10.1088/2631-7990/ad8711

Towards atomic-scale smooth surface manufacturing of β-Ga_(2)O_(3)via highly efficient atmospheric plasma etching

Yongjie Zhang ¹Yuxi Xiao ²Jianwen Liang ²Chun Zhang ³Hui Deng⁴

作者信息

1. Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,Guangdong 518055,People’s Republic of China Department of Physics,National University of Singapore,2 Science Drive 3,Singapore 117551,Singapore
2. Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,Guangdong 518055,People’s Republic of China
3. Department of Physics,National University of Singapore,2 Science Drive 3,Singapore 117551,Singapore
4. Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,Guangdong 518055,People’s Republic of China Shenzhen Engineering Research Center for Semiconductor-specific Equipment,Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,Guangdong 518055,People’s Republic of China
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摘要

关键词

atmospheric plasma/plasma etching/atomic-scale polishing/gallium oxide/next-generation semiconductor

分类

数理科学

引用本文复制引用

Yongjie Zhang,Yuxi Xiao,Jianwen Liang,Chun Zhang,Hui Deng..Towards atomic-scale smooth surface manufacturing of β-Ga_(2)O_(3)via highly efficient atmospheric plasma etching[J].International Journal of Extreme Manufacturing,2025,7(1):P.482-502,21.

基金项目

supported by the National Natural Science Foundation of China(52375437,52035009) （52375437,52035009）

the Natural Science Foundation of Guangdong Province(2024B1515020027) （2024B1515020027）

the Shenzhen Science and Technology Program(Grant No.KQTD20170810110250357)for the financial support （Grant No.KQTD20170810110250357）

the assistance of SUSTech Core Research Facilities （）

supported by Shenzhen Engineering Research Center for Semiconductorspecific Equipment。（）

International Journal of Extreme Manufacturing

ISSN：2631-8644

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