首页|期刊导航|International Journal of Extreme Manufacturing|Materials,processes,devices and applications of magnetoresistive random access memory

Materials,processes,devices and applications of magnetoresistive random access memory

Meiyin Yang Yan Cui Jingsheng Chen Jun Luo

International Journal of Extreme Manufacturing2025，Vol.7Issue(1)：P.277-306,30.

International Journal of Extreme Manufacturing2025，Vol.7Issue(1)：P.277-306,30.DOI:10.1088/2631-7990/ad87cb

Materials,processes,devices and applications of magnetoresistive random access memory

Meiyin Yang ¹Yan Cui ¹Jingsheng Chen ²Jun Luo¹

作者信息

1. Key Laboratory of Fabrication Technologies for Integrated Circuits,Chinese Academy of Sciences,Beijing 100029,People’s Republic of China Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,People’s Republic of China School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,People’s Republic of China
2. Department of Materials Science and Engineering,National University of Singapore,Singapore 117575,Singapore Suzhou Research Institute,National University of Singapore,Suzhou,Jiangsu 215000,People’s Republic of China
折叠

摘要

关键词

spin transfer torque-magnetoresistive random access memory(STT-MRAM)/spin-orbit torque(SOT)MRAM/materials for MRAM/field-free writing of SOT-MRAM/MRAM process/artificial intelligence

分类

信息技术与安全科学

引用本文复制引用

Meiyin Yang,Yan Cui,Jingsheng Chen,Jun Luo..Materials,processes,devices and applications of magnetoresistive random access memory[J].International Journal of Extreme Manufacturing,2025,7(1):P.277-306,30.

基金项目

supported in part by the Youth Innovation Promotion Association of Chinese Academy of Sciences(CAS)under Grant 2020118 （CAS）

Beijing Nova Program under Grant 20230484358 （）

Beijing Superstring Academy of Memory Technology:under Grant No.E2DF06X003。（）

International Journal of Extreme Manufacturing

ISSN：2631-8644

访问量0

下载量0

段落导航