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Low-power consumption anisotropic CMOS inverters based on n-ReS_(2)and p-WSe_(2)

Ting Fu Shuai Liu Baoxin Niu Wanfu Shen Chunguang Hu Ruixuan Peng Kai Liu Chengbao Jiang Shengxue Yang

Nano Research2025，Vol.18Issue(3)：P.502-509,8.

Nano Research2025，Vol.18Issue(3)：P.502-509,8.DOI:10.26599/NR.2025.94907231

Low-power consumption anisotropic CMOS inverters based on n-ReS_(2)and p-WSe_(2)

Ting Fu ¹Shuai Liu ¹Baoxin Niu ²Wanfu Shen ²Chunguang Hu ²Ruixuan Peng ³Kai Liu ³Chengbao Jiang ¹Shengxue Yang¹

作者信息

1. School of Materials Science and Engineering,Beihang University,Beijing 102206,China
2. State Key Laboratory of Precision Measuring Technology and Instruments,Tianjin University,Tianjin 300072,China
3. School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China
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摘要

关键词

anisotropic CMOS inverters/two-dimensional materials/voltage gain/low power consumption

分类

信息技术与安全科学

引用本文复制引用

Ting Fu,Shuai Liu,Baoxin Niu,Wanfu Shen,Chunguang Hu,Ruixuan Peng,Kai Liu,Chengbao Jiang,Shengxue Yang..Low-power consumption anisotropic CMOS inverters based on n-ReS_(2)and p-WSe_(2)[J].Nano Research,2025,18(3):P.502-509,8.

基金项目

supported by the National Natural Science Foundation of China(NSFC)(No.52372131). （NSFC）

Nano Research

ISSN：1998-0124

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