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Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures

Mikhail K.Sotnichuk Anton V.Ikonnikov Dmitry R.Khokhlov Nikolay N.Mikhailov Sergey A.Dvoretsky Vladimir I.Gavrilenko

半导体学报（英文版）2025，Vol.46Issue(4)：88-98,11.

半导体学报（英文版）2025，Vol.46Issue(4)：88-98,11.DOI:10.1088/1674-4926/24090023

Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures

Mikhail K.Sotnichuk ¹Anton V.Ikonnikov ¹Dmitry R.Khokhlov ¹Nikolay N.Mikhailov ²Sergey A.Dvoretsky ²Vladimir I.Gavrilenko³

作者信息

1. Faculty of Physics,Lomonosov Moscow State University,Moscow 119991,Russia
2. Rzhanov Institute of Semiconductor Physics,Siberian Branch of Russian Academy of Sciences,Novosibirsk 630090,Russia
3. Institute for Physics of Microstructures,Russian Academy of Sciences,Nizhny Novgorod 603950,Russia
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摘要

关键词

quantum well/CdHgTe/persistent photoconductivity/heterostructure/spectroscopy

Key words

quantum well/CdHgTe/persistent photoconductivity/heterostructure/spectroscopy

引用本文复制引用

Mikhail K.Sotnichuk,Anton V.Ikonnikov,Dmitry R.Khokhlov,Nikolay N.Mikhailov,Sergey A.Dvoretsky,Vladimir I.Gavrilenko..Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures[J].半导体学报（英文版）,2025,46(4):88-98,11.

基金项目

This work was supported by the Russian Science Founda-tion(Grant No.22-12-00298).Calculation of band dispersion and phonon density of states was supported by the Center of Excellence"Center of Photonics"funded by the Ministry of Sci-ence and Higher Education of the Russian Federation,Con-tract#075-15-2022-316.M.K.Sotnichuk is grateful to the Theo-retical Physics and Mathematics Advancement Foundation"BASIS"scholarship for the support.We also thank V.V.Rumyantsev for his assistance in analyzing PPC oscillations. （Grant No.22-12-00298）

半导体学报（英文版）

ISSN：1674-4926

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