基于开通延时变化的多芯片IGBT模块部分芯片失效监测方法OA北大核心
A fault detection method for partial chip failure in multichip IGBT modules based on turn-on delay time
多芯片绝缘栅极双极型晶体管(insulated gate bipolar transistor,IGBT)模块被广泛应用于大功率变换器中,对其进行状态监测可以有效提高电力设备可靠性.文中提出了一种基于开通延时变化的多芯片IGBT模块部分芯片故障检测方法,分析了芯片失效对开通过程的影响,指出了芯片失效与开通延时的关系,基于开通延时与失效芯片数的映射关系提出了对应的故障监测方法,并通过实验验证了方法的有效性.实验结果表明:文中所提方法可用于多芯片模块的健康状态监测,对提高变流器的运行可靠性具有重要意义.
Multichip insulated gate bipolar transistor(IGBT)modules are widely used in high-power converters,where condition monitoring plays a crucial role in improving the reliability of power equipment.This paper proposes a fault detection method for identifying partial chip failures in multichip IGBT modules by analyzing variations in turn-on delay time.First,the influence of chip failure on the turn-on process is analyzed,establishing the relationship between chip failure and turn-on delay.Based on this relationship,a fault monitoring method is developed to correlate turn-on delay with the number of failed chips.The effectiveness of the proposed method is verified by experimental testing.The results show that this method is significant for improving the operational reliability of power converters.
罗丹;陈民铀;赖伟;李涵锐;夏宏鉴
国网重庆市电力公司市南供电分公司,重庆 400000重庆大学 输配电装备及系统安全与新技术国家重点实验室,重庆 400044重庆大学 输配电装备及系统安全与新技术国家重点实验室,重庆 400044重庆大学 输配电装备及系统安全与新技术国家重点实验室,重庆 400044重庆大学 输配电装备及系统安全与新技术国家重点实验室,重庆 400044
动力与电气工程
故障诊断IGBT多芯片模块开通延时状态监测
fault detectionIGBTmultichip moduleturn-on delaycondition monitoring
《重庆大学学报》 2025 (3)
14-26,13
国家自然科学基金资助项目(5200070692)高等学校学科创新引智计划(111计划)资助项目(B08036).Supported by National Natural Science Foundation of China(5200070692),and National"111"Project(B08036).
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