重庆大学学报2025，Vol.48Issue(3)：14-26,13.DOI:10.11835/j.issn.1000-582X.2023.227
基于开通延时变化的多芯片IGBT模块部分芯片失效监测方法
A fault detection method for partial chip failure in multichip IGBT modules based on turn-on delay time
摘要
Abstract
Multichip insulated gate bipolar transistor(IGBT)modules are widely used in high-power converters,where condition monitoring plays a crucial role in improving the reliability of power equipment.This paper proposes a fault detection method for identifying partial chip failures in multichip IGBT modules by analyzing variations in turn-on delay time.First,the influence of chip failure on the turn-on process is analyzed,establishing the relationship between chip failure and turn-on delay.Based on this relationship,a fault monitoring method is developed to correlate turn-on delay with the number of failed chips.The effectiveness of the proposed method is verified by experimental testing.The results show that this method is significant for improving the operational reliability of power converters.关键词
故障诊断/IGBT/多芯片模块/开通延时/状态监测Key words
fault detection/IGBT/multichip module/turn-on delay/condition monitoring分类
信息技术与安全科学引用本文复制引用
罗丹,陈民铀,赖伟,李涵锐,夏宏鉴..基于开通延时变化的多芯片IGBT模块部分芯片失效监测方法[J].重庆大学学报,2025,48(3):14-26,13.基金项目
国家自然科学基金资助项目(5200070692) （5200070692）
高等学校学科创新引智计划(111计划)资助项目(B08036).Supported by National Natural Science Foundation of China(5200070692),and National"111"Project(B08036). （111计划）
