中国电机工程学报2025，Vol.45Issue(8)：3172-3184,中插26,14.DOI:10.13334/j.0258-8013.pcsee.240342
考虑IGBT死区效应的全桥MMC等效建模方法
Full-bridge MMC Equivalent Modeling Method Considering IGBT Dead-time Effect
摘要
Abstract
To prevent damage to the IGBT DC capacitance in full-bridge submodules,modular multilevel converters(MMCs)in practical applications typically implement dead-time control using"break-before-make"operation.Simulating this dead-time process is essential as it affects capacitor voltage variations and increases output-side total harmonic distortion(THD).However,due to diode freewheeling during dead time,simulations currently require detailed discrete-component models,as existing accelerated equivalent models cannot incorporate dead-time effects.This paper presents a solution combining discrete diode modeling with MMC Thévenin equivalent circuits,featuring separate"dead-time operation"and"normal operation"submodule designs with state transitions achieved through state variable inheritance.The proposed method has been implemented in PSCAD/EMTDC for both detailed dead-zone modeling and equivalent modeling of full-bridge MMCs.Simulation results demonstrate that the proposed model achieves high acceleration ratios while maintaining accuracy,fully meeting practical engineering simulation requirements for MMC systems with dead-time control.关键词
全桥型模块化多电平换流器/死区等效建模/戴维南等效/状态变量继承Key words
full bridge modular multilevel converter/dead time equivalent modeling/thevenin equivalent/state variable inheritance分类
信息技术与安全科学引用本文复制引用
井航,许建中,潘可盈,冯谟可..考虑IGBT死区效应的全桥MMC等效建模方法[J].中国电机工程学报,2025,45(8):3172-3184,中插26,14.基金项目
国家电网有限公司科技项目(5500-202255495A-3-0-ZZ).Science and Technology Project of State Grid Corporation of China(5500-202255495A-3-0-ZZ). （5500-202255495A-3-0-ZZ）
