发光学报2025，Vol.46Issue(4)：582-596,15.DOI:10.37188/CJL.20240270
ZnO基器件中的负光电导特性研究
Negative Photoconductivity in ZnO Devices
摘要
Abstract
As one of the best-known n-type metal oxides in third-generation semiconductor electronic devices,in particular,with its high detection rate,high optical gain,and high sensitivity,ZnO is commonly used in the con-struction of high-performance ultraviolet photodetectors.The photoconductivity behavior of zinc oxide strongly de-pends on its surface interface properties,the trapping and detrapping of photogenerated carriers by defect states near the conduction band.Researches have found that persistent photoconductivity and even negative photoconductivity(NPC)effects can be observed in ZnO devices due to carrier loss and defect trapping.This paper starts from the posi-tive photoconductivity mechanism of ZnO devices,and provides a detailed introduction to the negative photoconduc-tivity phenomena observed in ZnO-based devices under different preparation conditions and ambient temperatures,different driving methods,dielectric recombination,and heterostructures,as well as the microscopic physical mecha-nisms responsible for the negative photoconductivity effect.Underlying the NPC effect of ZnO can provide a feasible approach for constructing highly efficiency logic circuits,light-emitting diodes,solar cells,and ultra-high resolution imaging sensors.关键词
氧化锌/光电性质/负光电导Key words
zinc oxide/optoelectronic properties/negative photoconductivity分类
物理学引用本文复制引用
张晴怡,杨羽欣,刘凯,王雷,陈峰,徐春祥..ZnO基器件中的负光电导特性研究[J].发光学报,2025,46(4):582-596,15.基金项目
国家自然科学基金(62104103,62275120)Supported by National Natural Science Foundation of China(62104103,62275120) （62104103,62275120）
