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AlGaAs插入结构对InAlGaAs/AlGaAs多量子阱发光特性的影响

赵书存 王海珠 王登魁 甘露露 王祯胜 吕明辉 马晓辉

发光学报2025,Vol.46Issue(4):683-690,8.
发光学报2025,Vol.46Issue(4):683-690,8.DOI:10.37188/CJL.20240318

AlGaAs插入结构对InAlGaAs/AlGaAs多量子阱发光特性的影响

Influence of AlGaAs Insertion Structure on Luminescence Characteristics of InAlGaAs/AlGaAs Multiple Quantum Wells

赵书存 1王海珠 1王登魁 1甘露露 1王祯胜 1吕明辉 1马晓辉1

作者信息

  • 1. 长春理工大学高功率半导体激光国家重点实验室,吉林长春 130022||长春理工大学重庆研究院,重庆 401135
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摘要

Abstract

InAlGaAs/AlGaAs multiple quantum wells(MQWs)have attracted increasing attention in the near-in-frared and visible light fields due to their wide spectral range,and have become an emerging research hotspot.This study uses metal organic chemical vapor deposition(MOCVD)growth technology to prepare InAlGaAs/AlGaAs multi quantum well materials.Based on the main factors and theoretical calculation methods that need to be considered when selecting the insertion layer(ISL)material,the influence of the insertion layer structure on the luminescence properties of quantum wells is explored.We designed and grew InAlGaAs quantum wells without an insertion layer,as well as InAlGaAs quantum wells with AlGaAs insertion layers of varying thicknesses and Al compositions.The ex-perimental results show that the introduction of the insertion layer significantly improves the luminescence intensity of the quantum well.Although there are localized states in the sample itself,the presence of the insertion layer does not introduce more localized states,and the presence of the insertion layer does not change the carrier recombination mechanism in quantum wells.The research results provide important theoretical analysis and experimental data for the structural optimization and insertion layer technology of InAlGaAs quantum wells,indicating that the optical per-formance of InAlGaAs quantum wells can be significantly improved by designing the insertion layer reasonably.

关键词

InAlGaAs多量子阱/插入层/金属有机化合物化学气相沉积(MOCVD)

Key words

InAlGaAs multi quantum well/insertion layer/metal organic chemical vapor deposition(MOCVD)

分类

数理科学

引用本文复制引用

赵书存,王海珠,王登魁,甘露露,王祯胜,吕明辉,马晓辉..AlGaAs插入结构对InAlGaAs/AlGaAs多量子阱发光特性的影响[J].发光学报,2025,46(4):683-690,8.

基金项目

重庆市自然科学基金(cstc2021jcyjmsxmX1060,CSTB2022NSCQ-MSX0401)Supported by Natural Science Foundation of Chongqing(cstc2021jcyjmsxmX1060,CSTB2022NSCQ-MSX0401) (cstc2021jcyjmsxmX1060,CSTB2022NSCQ-MSX0401)

发光学报

OA北大核心

1000-7032

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