光通信研究Issue(2)：86-92,7.DOI:10.13756/j.gtxyj.2025.240016
基于微转印方法实现III-V-on-SOI异质集成光电探测器
Heterogeneous Integrated III-V-on-SOI Photodetector Using Micro-transfer Printing Method
王兆璁 1全志恒 2郑施冠卿 1朱岩 3叶楠 1陆梁军 4周林杰 4宋英雄1
作者信息
- 1. 上海大学 特种光纤与光接入网重点实验室,上海 200444
- 2. 九峰山实验室 工艺中心,武汉 430074
- 3. 北京英孚瑞半导体科技有限公司,北京 100037
- 4. 上海交通大学 区域光纤通信网与新型光通信系统国家重点实验室,上海 200240||上海交通大学 平湖智能光电研究院,浙江 平湖 314299
- 折叠
摘要
Abstract
[Objective]Silicon-based optoelectronic platforms have the advantages of low-cost manufacturing,high integration density,and high transmission speed.However,due to the photoelectric properties of silicon materials,it is difficult for mono-crystalline silicon to directly achieve high responsivity detection in the O/C band of optical fiber communication.InP-based In-GaAs material has an absorption coefficient of 1.0×10 cm-2 in the O/C band of optical fiber communication,which can be used as an active photodetector with high absorption efficiency.Therefore,the combination of InGaAs/InP active devices and sili-con-based waveguides through heterogeneous integration is a feasible direction to achieve high-efficiency photodetectors based on silicon photonic platforms.The large lattice mismatch and the difference in thermal expansion coefficient make it hard to achieve large-scale integration through epitaxial growth technology.The micro-transfer printing technology in bonding integration technol-ogy can achieve integration on the micron scale,thereby enabling low-cost,high-efficiency preparation of heterogeneous integrat-ed devices.In the existing preparation process of this technology,the scheme of separating the device from the substrate by etch-ing the sacrificial layer requires extremely high process accumulation.The purpose of this paper is to realize the direct bonding inte-gration of InGaAs/InP Avalanche Photodetector Device(APD)and Silicon on Insulator(SOI)Grating Coupler(GC)by mi-cro-transfer method while retaining the original substrate of the detector.[Methods]This paper studies the basic principle of mi-cro-transfer printing method and builds a micro-transfer printing experimental platform.The heterogeneous integration of the III-V APD sample and the GC on the SOI wafer is realized by the micro-transfer method.The feasibility of the micro-transfer method is evaluated based on the test results.[Results]The response bandwidth of the heterogeneous integrated photodetector ob-tained by micro-transfer integration is about 4 GHz,and the dark current is about 13 nA(@-13 V),which is basically consistent with the performance test data before the integration of the sample.Affected by the coupling loss,the responsivity of the integrat-ed structure is 7.3×10-3 A/W(@-25 V).After eliminating the loss of the input fiber-GC,the responsivity of the integrated de-vice is about 1.8×10-2 A/W(@-25 V).[Conclusion]The work of this paper verifies the feasibility of heterogeneous integration of III-V APD and SOI waveguide platforms based on micro-transfer method.By retaining the InP substrate,the micron-scale×micron-scale APD and SOI GC are directly bonded and integrated through the van der Waals force between the InP substrate/sili-con-based photonic platform interface.In this way,we simplify the implementation process of the micro-transfer process with im-proved integration efficiency.It can be verified by experiments that the dark current and bandwidth performance of the devices be-fore and after integration remain basically unchanged.关键词
硅基光电子/异质集成/微转印/光电探测器Key words
silicon-based optoelectronics/heterogeneous integration/micro-transfer printing/photodetector分类
信息技术与安全科学引用本文复制引用
王兆璁,全志恒,郑施冠卿,朱岩,叶楠,陆梁军,周林杰,宋英雄..基于微转印方法实现III-V-on-SOI异质集成光电探测器[J].光通信研究,2025,(2):86-92,7.
