强激光与粒子束2025，Vol.37Issue(5)：29-35,7.DOI:10.11884/HPLPB202537.240362
4H-SiC双极型光电晶体管电子束辐照效应
Electron radiation effects on a 4H-SiC bipolar phototransistor
摘要
Abstract
The electron irradiation effect of a 4H-SiC npn bipolar transistor UV detector is investigated in this paper.When the phototransistor is biased at 5 V,before irradiation,its dark current is about 58 nA,and its responsivity to 365 nm UV light is about 31A/W.After the device is irradiated by a 10 MeV e-beam,the order of magnitude of the dark current decreases to 10-11 A,and the responsivity decreases to about 1/8 of the original one.After irradiation,the responsivity of the device is significantly affected by the bias voltage:it decreases as the bias voltage decreases,and when the phototransistor is biased at 3 V,the responsivity decreases to 2.25 A/W.E-beam irradiation also affects the switching response of the UV detector,which results in a longer total time of response.In this paper,the circuit model of phototransistor operation is established,and the decrease of light generation current,the decrease of transistor gain and the increase of series resistance caused by electron beam irradiation are the main reasons for the degradation of photodetector's UV response performance.关键词
4H-SiC探测器/双极型晶体管/电子束辐照/响应电流/紫外探测Key words
4H-SiC detector/bipolar transistor/electron irradiation/response photocurrent/ultraviolet detection分类
信息技术与安全科学引用本文复制引用
叶思恩,黄丹阳,付祥和,赵小龙,贺永宁..4H-SiC双极型光电晶体管电子束辐照效应[J].强激光与粒子束,2025,37(5):29-35,7.基金项目
国家自然科学基金项目(62004158) （62004158）
