强激光与粒子束2025，Vol.37Issue(5)：86-93,8.DOI:10.11884/HPLPB202537.240235
BCD工艺栅极驱动器总剂量效应
Total ionizing dose effect on gate drivers fabricated by BCD technology
摘要
Abstract
The BCD technology integrates Bipolar,Complementary Metal Oxide Semiconductor(CMOS),and Double Diffused MOSFET(DMOS)within a single chip,widely utilized in electronic components and system production.Gate drivers fabricated by BCD technology can reduce transmission delays,lower power consumption,and enhance drive capabilities.However,the radiation effects in space environments may lead to performance degradation and potentially jeopardize the safety of spacecraft.This paper focuses on gate drivers based on BCD technology,employing an enclosed layout structure for total ionizing dose(TID)radiation hardening.Through TID irradiation tests,the electrical parameter variations between hardened and unhardened devices are compared.Results indicate that TID radiation causes degradation in the output voltage and current characteristics of the device,manifesting as a decrease in switching voltage and an increase in output current,while having a negligible impact on the output resistance.Comparing test outcomes from both types of drivers,it is evident that the ring-gate hardening method effectively mitigates edge leakage induced by TID radiation to a certain extent.Nevertheless,functional failure occurs in the devices at 500 krad(Si).关键词
BCD工艺/栅极驱动器/总剂量效应/环栅加固器件Key words
BCD technology/gate driver/total ionizing dose effect/enclosed layout device分类
信息技术与安全科学引用本文复制引用
许世萍,郭旗,崔江维,郑齐文,刘刚,邢康伟,李小龙,施炜雷,王信,李豫东..BCD工艺栅极驱动器总剂量效应[J].强激光与粒子束,2025,37(5):86-93,8.基金项目
新疆维吾尔自治区重点研发计划项目(2023B01008) （2023B01008）
国家重点研发计划项目(2021YFB2401602) （2021YFB2401602）
国家自然科学基金项目(12275352) （12275352）
新疆维吾尔自治区自然科学基金项目(2022D01E92) （2022D01E92）
中国科学院青年创新促进会项目 （）
