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拓扑界面态器件设计理论进展

任远航 李帅 张智强 江华

物理学报2025,Vol.74Issue(7):211-223,13.
物理学报2025,Vol.74Issue(7):211-223,13.DOI:10.7498/aps.74.20250122

拓扑界面态器件设计理论进展

Research progress of topological interface device design theory

任远航 1李帅 2张智强 3江华4

作者信息

  • 1. 苏州大学物理科学与技术学院,苏州 215006||苏州大学高等研究院,苏州 215006
  • 2. 河北科技大学理学院,河北省表界面光电调控重点实验室,石家庄 050018
  • 3. 苏州大学物理科学与技术学院,苏州 215006||复旦大学理论物理与信息科学交叉中心,上海 200082
  • 4. 复旦大学理论物理与信息科学交叉中心,上海 200082
  • 折叠

摘要

Abstract

With the development of the topological theory,it is believed that topological states originate from topologically protected interfaces in condensed matter systems.Significantly,by adjusting the topological interfaces,one can manipulate the transport properties of a sample,thereby possessing distinct features.This paper briefly reviews recent progresses about topological interfaces and their potential applications in quantum devices.In the first part,we expound the fundamental ideas about topological interfaces in disordered Chern insulators.Based on their transport properties,the designs of programmable circuits and logical gates are also clarified.These designs significantly improve the utilization of sample compared with topological surface devices.The second part focuses on the topological interfaces in three-dimensional systems,which exhibits the layertronics of the interfaces.We present axion insulator MnBi2Te4 as a typical example,and the realization of the basic layertronics devices is proposed.Finally,this work summarizes the advantages of topological interface devices and proposes some potential breakthroughs to be achieved in this field.

关键词

拓扑绝缘体/量子反常霍尔效应/无序效应/轴子绝缘体

Key words

topological insulator/quantum anomalous Hall effect/disorder effect/axion insulator

引用本文复制引用

任远航,李帅,张智强,江华..拓扑界面态器件设计理论进展[J].物理学报,2025,74(7):211-223,13.

基金项目

国家自然科学基金(批准号:12350401)和上海市科技创新行动计划(批准号:24LZ1400800)资助的课题. Project supported by the National Natural Science Foundation of China(Grant No.12350401)and the 2024 Shanghai Action Plan for Science,Technology and Innovation,China(Grant No.24LZ1400800). (批准号:12350401)

物理学报

OA北大核心

1000-3290

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