纳微快报(英文)2025,Vol.17Issue(8):294-305,12.DOI:10.1007/s40820-025-01702-7
A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials
A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials
摘要
关键词
Two-dimensional semiconductors/1 nm technology node/Nanosheet field-effect transistors/Complementary field-effect transistors/Horizontal scalingKey words
Two-dimensional semiconductors/1 nm technology node/Nanosheet field-effect transistors/Complementary field-effect transistors/Horizontal scaling引用本文复制引用
Yang Shen,Zhejia Zhang,Zhujun Yao,Mengge Jin,Jintian Gao,Yuhan Zhao,Wenzhong Bao,Yabin Sun,He Tian..A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials[J].纳微快报(英文),2025,17(8):294-305,12.基金项目
This work was supported in part by STI 2030—Major Projects under Grant 2022ZD0209200,in part by Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(L233009),in part by National Natural Science Foundation of China under Grant No.62374099,in part by the Tsinghua-Toy-ota Joint Research Fund,in part by the Daikin Tsinghua Union Program,in part by Independent Research Program of School of Integrated Circuits,Tsinghua University.This work was also spon-sored by CIE-Tencent Robotics X Rhino-Bird Focused Research Program. (L233009)