物理学报2025，Vol.74Issue(7)：315-324,10.DOI:10.7498/aps.74.20241706
Ga2O3纳米机电谐振器机械能量耗散途径研究
Mechanical energy dissipation pathways in Ga2O3 nanoelectromechanical resonators
摘要
Abstract
Beta-gallium oxide(β-Ga2O3),an emerging ultrawide bandgap(～4.8 eV)semiconductor,exhibits excellent electrical properties and cost advantages,being made as a promising candidate for high-power,high-frequency,and optoelectronic applications.Furthermore,its superior mechanical properties,including a Young's modulus of 261 GPa,a mass density of 5950 kg/m3,and an acoustic velocity of 6623 m/s,make it particularly attractive for realizing high-frequency micro-and nanoelectromechanical system(M/NEMS)resonators.In this work,the energy dissipation mechanisms are investigated in two different β-Ga2O3 NEMS resonator geometries-doubly-clamped beams(10.5-20.8 μm length)and circular drumheads(3.3-5.3 μm diameter)-through theoretical analysis,finite element model(FEM)simulations,and experimental measurements under vacuum condition(＜50 mTorr). The dominant energy dissipation mechanisms in resonators are investigated,including Akhiezer damping(AKE),thermoelastic damping(TED),clamping loss,and surface loss,by using a combined theoretical and FEM approach.Experimentally,the resonators are made by employing mechanical exfoliation combined with dry transfer techniques,yielding device thickness of 30-500 nm as verified by atomic force microscopy(AFM).Subsequently,laser interferometry is used to characterize the resonator dynamics.The resonant frequency f is obtained in a range of 5-75 MHz and the quality factor Q is approximately 200-1700 obtained through Lorentzian fitting of the resonant spectra,thus verifying the theoretical and simulation results.Our analysis indicates that surface loss and clamping loss are the main limiting factors for the Q values of current β-Ga2O3 resonators.Conversely,AKE and TED are mainly affected by material properties and resonator geometry,thus setting an upper limit for the achievable Q values with f× Q product reaching up to 1014 Hz. Our study provides a comprehensive framework integrating both theoretical analysis and experimental validation for understanding the complex energy dissipation mechanism inside a β-Ga2O3 NEMS resonator,and optimizes Q value through strain engineering and phonon crystal anchoring.These findings provide essential guidance for optimizing the performance and modulating the bandwidth of β-Ga2O3 NEMS resonator in high-frequency and high-power applications.关键词
β-Ga2O3/纳米机电谐振器/品质因数/能量耗散机制Key words
β-Ga2O3/nanoelectromechanical resonator/quality factor/energy dissipation mechanism引用本文复制引用
郑旭骞,巩思豫,耿红尚,郭宇锋..Ga2O3纳米机电谐振器机械能量耗散途径研究[J].物理学报,2025,74(7):315-324,10.基金项目
国家重点研发计划(批准号:2022YFB3203600)、江苏省基础研究计划自然科学基金青年基金(批准号:BK20230360)和南京邮电大学引进人才科研启动基金(批准号:NY222106)资助的课题. Project supported by the National Key Research and Development Program of China(Grant No.2022YFB3203600),the Jiangsu Province Natural Science Foundation for Basic Research Program(Grant No.BK20230360),and the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(Grant No.NY222106). （批准号:2022YFB3203600）
