太赫兹科学与电子信息学报2025，Vol.23Issue(4)：309-316,8.DOI:10.11805/TKYDA2024224
集成低势垒二极管的1.2kV SiC MOSFET器件功耗
Power consumption of 1.2 kV SiC MOSFET with integrated Low-Barrier Diode
摘要
Abstract
To address the issue of high freewheeling losses caused by SiC Metal-Oxide-Semiconductor Field-Effect Transistors(MOSFETs)during the freewheeling process in power modules,an integrated Low-Barrier Diode SiC MOSFET(LBD-MOS)structure is proposed.The total power consumption of LBD-MOS and the conventional SiC MOSFET(CON-MOS)under the same area is investigated.Simulation results show that the freewheeling voltage drop(UF)of LBD-MOS is 1.6 V,which is 50%lower than that of CON-MOS;the switching loss(E_switch)of LBD-MOS is 187.3 μJ,which is 6%lower than that of CON-MOS.Under operating conditions with a frequency of 10 kHz and a duty cycle of 50%,the total power consumption of LBD-MOS is reduced by 22.6%compared to that of CON-MOS.LBD-MOS is suitable for applications where the freewheeling ratio is higher than 50%and the switching frequency does not exceed 1 MHz.关键词
SiC金属-氧化物半导体场效应晶体管(MOSFET)/集成低势垒二极管/导通功耗/续流功耗/开关功耗/反向恢复功耗Key words
SiC Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET)/integrated Low Barrier Diode/conduction power/freewheeling power/switching power/reverse recovery power分类
信息技术与安全科学引用本文复制引用
孙佳萌,付浩,魏家行,刘斯扬,孙伟锋..集成低势垒二极管的1.2kV SiC MOSFET器件功耗[J].太赫兹科学与电子信息学报,2025,23(4):309-316,8.基金项目
国家自然科学基金资助项目(62004037) （62004037）
