摘要
Abstract
In recent years,significant progress has been made in the development of domestic 6-inch SiC-based Gallium Nitride High Electron Mobility Transistors(GaN HEMTs).This paper investigates the multi-layer dielectric stress modulation technique and high-consistency backside etching technique,which are integrated into the 6-inch process.When operating at 48 V,the 0.5 μm process achieves an output power density of 8.6 W/mm at 3.5 GHz,with a power gain of 15 dB and a Power Added Efficiency(PAE)of 58.5%.When operating at 28 V,the 0.25 μm process achieves an output power density of 5.5 W/mm at 10 GHz,with a power gain of 8.7 dB and a PAE of 55.2%.The reliability of GaN devices is evaluated through High-Temperature Operating Life(HTOL)and High-Temperature Reverse Bias(HTRB)tests,with the saturation output current of the devices changing by less than 10%after 1 000 hours.The 20 W and 40 W power transistors,as well as X-band Monolithic Microwave Integrated Circuit(MMIC)power amplifiers,are fabricated to validate the process technology,with measured on-wafer yields of 90%,86%,and 77%,respectively.The results indicate that domestic 6-inch SiC-based GaN HEMTs have application potential below the Ku-band.关键词
氮化镓高电子迁移率晶体管(GaN HEMT)/6英寸/国产衬底/国产外延/工艺技术/良率Key words
GaN High Electron Mobility Transistor(GaN HEMT)/6 inch/domestic substrate/domestic epitaxy/process technology/yield分类
电子信息工程
