太赫兹科学与电子信息学报2025，Vol.23Issue(4)：331-339,9.DOI:10.11805/TKYDA2024517
基于SiC DSRD纳秒级高压脉冲产生电路关键参数研究
Investigation on key parameters of nanosecond high voltage pulse circuit based on SiC DSRD
杨早 1陈万军 1陈资文1
作者信息
- 1. 电子科技大学 集成电路科学与工程学院,四川 成都 611731
- 折叠
摘要
Abstract
The working principle of a nanosecond-level high-voltage pulse generation circuit based on a Drift Step Recovery Diode(DSRD)is introduced.The circuit is modeled,and the key circuit parameters that affect the pulse output characteristics are discussed based on the model.In the experiment,a high-voltage Silicon Carbide(SiC)DSRD device developed in the author's laboratory is employed to generate a nanosecond-level pulse voltage with a peak value of 2.27 kV and a rise time of 1.846 ns on a standard load of 50 Ω.By changing the key parameters in the circuit,the variation trends of the pulse voltage peak obtained from the tests are consistent with the analysis from the model,which validates the rationality of the model.Considering the voltage overshoot issue at the drain-source terminals of the switch during the turn-off process,a buffer capacitor is connected in parallel across the drain-source terminals.The parameters of the buffer capacitor are adjusted experimentally to reduce the overshoot voltage at the drain-source terminals without affecting the peak voltage of the DSRD pulse discharge.关键词
漂移阶跃恢复二极管/电路参数/脉冲电路/纳秒级/碳化硅Key words
Drift Step Recovery Diode(DSRD)/circuit parameters/pulse circuit/nanosecond/silicon carbide分类
电子信息工程引用本文复制引用
杨早,陈万军,陈资文..基于SiC DSRD纳秒级高压脉冲产生电路关键参数研究[J].太赫兹科学与电子信息学报,2025,23(4):331-339,9.
