人工晶体学报2025，Vol.54Issue(4)：717-720,4.DOI:10.16553/j.cnki.issn1000-985x.2025.4001
4英寸高质量GaN单晶衬底制备
Preparation of 4-Inch High-Quality GaN Single Crystal Substrates
摘要
Abstract
In this study,the porous substrate and stress control techniques were adopted to successfully break through the dislocation suppression and stress control problems in the growth of heterogeneous epitaxial GaN single crystals,and high-quality GaN single crystals with a diameter of 4-inch were prepared.After cutting,chamfering,grinding,and chemical-mechanical polishing,a damage-free,ultra-smooth 4-inch self-separating GaN single crystal substrate with a thickness of 500 μm was obtained.The substrate has both excellent crystalline quality and mechanical stability,with uniform surface color,no cracking phenomenon,and uniform stress distribution;cathodoluminescence spectroscopy(CL)measurements reveal a dislocation density of 9.6 × 105 cm-2,and the rocking curve of high-resolution X-ray diffraction(HRXRD)(002)is as low as 57.91";the surface roughness Ra＜0.2 nm measured by atomic force microscope(AFM),presenting atomic-level flat surface.The as-prepared substrate is ready-to-use,meeting the requirements for blue/green laser diodes and power electronic devices.关键词
GaN单晶衬底/4英寸/氢化物气相外延/晶体生长/晶体加工Key words
GaN single crystal/4-inch/hydride vapor phase epitaxy/crystal growth/crystal processing引用本文复制引用
齐占国,蒋铠泽,张爽,陈秀芳,徐现刚,张雷,王守志,李秋波,王忠新,邵慧慧,刘磊,王国栋,孙德福,于汇东..4英寸高质量GaN单晶衬底制备[J].人工晶体学报,2025,54(4):717-720,4.基金项目
国家自然科学基金重点项目(62434010,52472010) （62434010,52472010）
