Enhanced Structure/Interfacial Properties of Single-Crystal Ni-Rich LiNi0.92Co0.04Mn0.04O2 Cathodes Synthesized Via LiCl-NaCl Molten-Salt Method
Ye-Wan Yoo Chea-Yun Kang Hyun-Kyung Kim Jong-Kyu Lee Ramachandran Vasant Kumar Kyong-Nam Kim Jung-Rag Yoon Seung-Hwan Lee
Enhanced Structure/Interfacial Properties of Single-Crystal Ni-Rich LiNi0.92Co0.04Mn0.04O2 Cathodes Synthesized Via LiCl-NaCl Molten-Salt Method
Enhanced Structure/Interfacial Properties of Single-Crystal Ni-Rich LiNi0.92Co0.04Mn0.04O2 Cathodes Synthesized Via LiCl-NaCl Molten-Salt Method
摘要
关键词
cathode materials/lithium-ion batteries/Ni-rich layered oxide/single crystal/transition metal ionsKey words
cathode materials/lithium-ion batteries/Ni-rich layered oxide/single crystal/transition metal ions引用本文复制引用
Ye-Wan Yoo,Chea-Yun Kang,Hyun-Kyung Kim,Jong-Kyu Lee,Ramachandran Vasant Kumar,Kyong-Nam Kim,Jung-Rag Yoon,Seung-Hwan Lee..Enhanced Structure/Interfacial Properties of Single-Crystal Ni-Rich LiNi0.92Co0.04Mn0.04O2 Cathodes Synthesized Via LiCl-NaCl Molten-Salt Method[J].能源与环境材料(英文),2025,8(1):58-69,12.基金项目
Y.-W.Y.and C.-Y.K.contributed equally to this work.This work was supported by the Technology Innovation Program(RS-2023-00256202,Development of MLCB design and manufacturing process technology for board mounting)funded By the Ministry of Trade,Industry & Energy(MOTIE,Korea).This work was sup-ported by the Technology Innovation Program(or Industrial Strategic Technology Development Program-Public-private joint investment semiconductor R&D pro-gram(K-CHIPS)to foster high-quality human resources)(RS-2023-00237003,High selectivity etching technology using cryoetch)funded By the Ministry of Trade,Industry & Energy(MOTIE,Korea).This study was supported by 2022 Research Grant from Kangwon National University(No.202203080001).This work was supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(RS-2023-00280367). (RS-2023-00256202,Development of MLCB design and manufacturing process technology for board mounting)