人工晶体学报2025，Vol.54Issue(4)：560-568,9.DOI:10.16553/j.cnki.issn1000-985x.2024.0255
残余应力及电场对4H-SiC表面压痕硬度的影响
Effect of Residual Stress and Electric Field on Indentation Hardness of 4H-SiC Surface
摘要
Abstract
The 4H-SiC samples with different surface residual stress states were obtained by lapping.The residual stress on the sample surface was measured by a laser Raman spectrometer,and the indentation hardness of the sample surface without and with electric field was measured by a microhardness tester.The results show that,compared to the state with no residual stress,the sample surface indentation hardness increases by up to 9.5％under a residual stress state ranging from-1.6 GPa to 0 GPa.After a certain current is applied to the sample,the indentation hardness of the sample surface with no residual stress can be reduced by about 6％,and the indentation hardness of the sample surface with residual stress can be reduced by about 13％.The surface indentation hardness of 4H-SiC with different residual stress ranging from-1.6 GPa to 1.6 GPa was simulated by finite element analysis.It is found that the residual tensile stress in the range of 0 GPa to 1.6 GPa can reduce the indentation hardness of the wafer surface by up to 5.8％.The mapping relationship between the residual stress,electric field,and the indentation hardness of 4H-SiC surface is obtained,providing a theoretical basis for reducing the surface hardness of the workpiece by regulating the residual stress and applying an electric field.关键词
残余应力/电场/压痕硬度/4H-SiC/有限元模拟/拉曼光谱Key words
residual stress/electric field/indentation hardness/4H-SiC/finite element simulation/Raman spectra分类
数理科学引用本文复制引用
朱兴杰,章平,左敦稳..残余应力及电场对4H-SiC表面压痕硬度的影响[J].人工晶体学报,2025,54(4):560-568,9.基金项目
国家自然科学基金(U20A20293) （U20A20293）
