人工晶体学报2025，Vol.54Issue(4)：569-580,12.DOI:10.16553/j.cnki.issn1000-985x.2024.0247
垂直热壁CVD反应器中C/Si比对SiC高速同质外延生长的影响研究
Effect of C/Si Ratio on SiC Fast Homoepitaxial Growth in Vertical Hot-Wall CVD Reactor
摘要
Abstract
The homoepitaxial growth mechanism of SiC was studied using both experiment and computational fluid dynamics(CFD)simulation in a vertical hot-wall CVD reactor with high-speed wafer rotation,and the influence of the C/Si ratio on the epitaxial growth rate and carrier doping concentration on the wafer surface were explored.The study reveals that the molar ratio of carbon-containing to silicon-containing species above the wafer surface(referred to as the effective C/Si ratio)deviates from the C/Si ratio at the gas inlet.This discrepancy is believed to be related to the gas species redistribution during the gas transport and diffusion,as well as parasitic deposition of precursors in the gas injector and/or on the hot-wall.The impact of the effective C/Si ratio on the growth rate and doping concentration was investigated.It is demonstrated that the growth rate,doping concentration and their uniformities are primarily influenced by the effective C/Si ratio at the wafer surface rather than the C/Si ratio at the gas inlet.By optimizing the growth conditions,high-quality 6-inch(1 inch=2.54 cm)epitaxial wafer is achieved with thickness and doping uniformity of 1.15％and 2.68％,respectively.8-inch SiC epitaxial wafer with similar thickness and doping uniformities is obtained.Moreover,SiC epilayer(thickness exceeding 50 μm)with high growth rate is also demonstrated.关键词
碳化硅/同质外延/化学气相沉积/C/Si比/CFD模拟仿真Key words
SiC/homoepitaxial/chemical vapor deposition/C/Si ratio/CFD simulation分类
数理科学引用本文复制引用
陈丹莹,闫龙,罗稼昊,郑振宇,姜勇,张凯,周宁,廖宸梓,郭世平..垂直热壁CVD反应器中C/Si比对SiC高速同质外延生长的影响研究[J].人工晶体学报,2025,54(4):569-580,12.基金项目
上海市浦江人才计划(22PJ1423600) （22PJ1423600）
