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国家自然科学基金半导体器件物理方向2020-2024年资助状况与趋势

唐华 岳俊

电子学报2025,Vol.53Issue(2):623-628,6.
电子学报2025,Vol.53Issue(2):623-628,6.DOI:10.12263/DZXB.20241116

国家自然科学基金半导体器件物理方向2020-2024年资助状况与趋势

Overview of Application,Funding Status,and Trends of NSFC Research Programs in Semiconductor Device Physics(2020-2024)

唐华 1岳俊2

作者信息

  • 1. 国家自然科学基金委员会信息科学部,北京 100085
  • 2. 中南大学自动化学院,湖南 长沙 410083
  • 折叠

摘要

Abstract

The physics of semiconductor devices,as a key scientific discipline for studying the working mechanisms and related physical phenomena of semiconductor devices,serves as a fundamental research direction in the field of semi-conductor science and information devices.It integrates multidisciplinary theories from materials science,physics,chemis-try,and microelectronics,providing theoretical support for advancing information technology and the semiconductor indus-try.This paper analyzes the application volume and funding success rates of various projects under the F0405 code in the field of semiconductor science and information devices over the past five years(2020-2024).Additionally,through a hot-spot word cloud analysis of project titles and keywords from funded projects during this period,the paper summarizes the themes and trends in basic research on semiconductor device physics.The aim is to explore the funding characteristics of the national natural science foundation of China(NSFC)in the field of semiconductor device physics in recent years,provid-ing insights for researchers in domestic academic institutions and enterprises to better understand the research hotspots,fu-ture development directions,and pathways in this field.

关键词

半导体器件物理/申请与资助/研究主题与热点/基础研究/半导体科学与信息器件

Key words

semiconductor device physics/application and funding/research topics and hotspots/basic research/semiconductor science and information devices

分类

电子信息工程

引用本文复制引用

唐华,岳俊..国家自然科学基金半导体器件物理方向2020-2024年资助状况与趋势[J].电子学报,2025,53(2):623-628,6.

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