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锗硅异质结双极型晶体管的历史发展及其在高温电子中的应用

官宇龙 常晓阳 王新河

集成电路与嵌入式系统2025,Vol.25Issue(5):8-15,8.
集成电路与嵌入式系统2025,Vol.25Issue(5):8-15,8.DOI:10.20193/j.ices2097-4191.2024.0091

锗硅异质结双极型晶体管的历史发展及其在高温电子中的应用

Thehistorical development of silicon-germanium heterojunction bipolar transistors with their applications in high temperature electronics

官宇龙 1常晓阳 1王新河1

作者信息

  • 1. 北京航空航天大学集成电路科学与工程学院,北京 100191
  • 折叠

摘要

Abstract

In recent years,Silicon-Germanium Heterojunction Bipolar Transistors(SiGe HBTs)have not only achieved significant ad-vancements in high-frequency performance but also demonstrated unique advantages in applications involving high-temperature electronic devices.This paper reviews the development of SiGe HBTs and explores their potential applications in high-temperature environments ranging from 100 to 300 ℃.By now,the most advanced SiGe HBT have shown a transit frequency of 500 GHz and a maximum oscilla-tion frequency of 700 GHz,highlighting their exceptional performance under high-frequency condition.Furthermore,SiGe HBTs have been integrated with 22 nm fully depleted silicon-on-insulator(FD-SOI)technology,forming the most scaled Bipolar Complementary Metal-Oxide-Semiconductor(BiCMOS)processes.This integration supports extremely high operating frequencies while enabling the cost-effective monolithic integration of advanced digital circuits with high-frequency transceivers.It paves the way for applications in mil-limeter-wave and terahertz bands such as automotive radar,satellite communications,and security imaging.A particular note is the su-perior performance of SiGe HBTs at high temperatures,characterized by low leakage current,high current gain,and cost-effectiveness.These attributes make SiGe HBTs an ideal choice for high-temperature electronic applications,showcasing substantial potential for relia-ble operation in extreme environments.

关键词

高温电子/锗硅异质结双极型晶体管/双极型互补式金属氧化物半导体/SiC/GaN

Key words

high temperature electronics/Silicon-Germanium heterojunction bipolar transistor/BiCMOS/SiC/GaN

分类

计算机与自动化

引用本文复制引用

官宇龙,常晓阳,王新河..锗硅异质结双极型晶体管的历史发展及其在高温电子中的应用[J].集成电路与嵌入式系统,2025,25(5):8-15,8.

基金项目

国家自然科学基金(No.62174010) (No.62174010)

北京市科技新星计划国家重点研发计划青年科学家(2022YFA1405900). (2022YFA1405900)

集成电路与嵌入式系统

1009-623X

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