集成电路与嵌入式系统2025，Vol.25Issue(5)：66-74,9.DOI:10.20193/j.ices2097-4191.2025.0008
FinFET器件的可靠性研究及模型构建
Reliability study and modelling development of FinFET devices
摘要
Abstract
As process nodes continue to shrink and device structures become increasingly complex with the three-dimensional designs of the device,the reliability of the device is becoming a critical concern in both academia and industry.In this paper,an in-depth study of the reliability of FinFET(Fin Field-Effect Transistor)devices has been carried out,and ageing experiments have been designed and con-ducted under the conditions of different numbers of fins(Nfin),drain stress voltages(Vdstress),gate stress voltages(Vgstress)and tempera-tures.Analysis of the test data indicates that the ageing phenomenon of FinFET devices increases with increasing Nfin,Vdstress,Vgstress and temperature.Based on these experimental results,a reliability aging model is developed with parameter optimisation employed to a-chieve an effective fit to the degradation of threshold voltage(Vth_lin)and saturation current(Idsat).The proposed model shows excellent simulation accuracy under different conditions,maintaining an average simulation error of less than 5 mV for the threshold voltage and within 1％for saturation current.关键词
可靠性/FinFET/阈值电压/饱和电流/老化模型Key words
reliability/FinFET/threshold voltage/saturation current/aging model分类
电子信息工程引用本文复制引用
王于波,刘芳,曹永万,郁文,张同,朱亚星,丁国静,梁英宗..FinFET器件的可靠性研究及模型构建[J].集成电路与嵌入式系统,2025,25(5):66-74,9.基金项目
国家重点研发计划资助项目—工艺-器件-电路协同设计方法(2023YFB4402700). （2023YFB4402700）
