电子科技大学学报2025，Vol.54Issue(3)：347-352,6.DOI:10.12178/1001-0548.2024064
硅和碳化硅MOSFET中PN结SEM图像掺杂衬度分析
Analysis of doping contrast in PN junction SEM images of Si and SiC MOSFET
冯文洁 1蔡亚辉 2付祥和 1黄丹阳 1王丹 1贺永宁1
作者信息
- 1. 西安交通大学微电子学院,西安 710049
- 2. 国防科技大学电子科学学院,长沙 410073
- 折叠
摘要
Abstract
PN junction is the foundation of semiconductor device structure.And the measurement of doping distribution in PN junction directly relates to the performance and reliability of devices.For doping analysis,secondary electron image shows great potential.Based on scanning electron microscopy,the PN junction doping profiles of silicon-based MOSFET and silicon carbide MOSFET were measured,revealing significant differences in doping profiles between silicon and silicon carbide materials.To elucidate the underlying mechanisms of the observed differences,the secondary electron emission coefficients of the pertinent materials were determined by the sample current method.The analysis of the obtained results indicates that the variations in the secondary electron emission are associated with surface states,which holds significant implications for the application of secondary electron imaging in semiconductor measurements.关键词
掺杂半导体衬度/扫描电子显微镜/二次电子/表面态Key words
doped semiconductor contrast/scanning electron microscopy/secondary electrons/surface states分类
电子信息工程引用本文复制引用
冯文洁,蔡亚辉,付祥和,黄丹阳,王丹,贺永宁..硅和碳化硅MOSFET中PN结SEM图像掺杂衬度分析[J].电子科技大学学报,2025,54(3):347-352,6.
