电子器件2025，Vol.48Issue(2)：243-249,7.DOI:10.3969/j.issn.1005-9490.2025.02.002
基于栅场板提升AlGaN/GaN HEMT器件输出功率研究
Study on Improving the Output Power of AlGaN/GaN HEMT Devices Based on Gate Field Plate
摘要
Abstract
The field plate structure can effectively suppress the electric field edge effect at the gate edge of HEMT devices,reduce the peak electric field,improve the breakdown voltage and the output power of the devices.Sentaurus TCAD tool is used to simulate the GaN power device,and the structure of double gate field plate and slant field plate is introduced and optimized.The breakdown voltage of the double gate field plate device is 344 V,which is 84%higher than that without field(187 V),and the maximum output power is 58 W/mm,which is 91%higher than that without field(30.4 W/mm).The breakdown voltage of the slant field plate device is 283.1 V,which is 51%higher than that without field,and the maximum output power is 47.2 W/mm,which is 55%higher than that without field.关键词
二重栅场板/倾斜场板/击穿电压/电场峰值Key words
double gate field plate/slant field plate/breakdown voltage/electric field peak value分类
电子信息工程引用本文复制引用
李月华,徐儒,万发雨,高志良,杨铭,延峰..基于栅场板提升AlGaN/GaN HEMT器件输出功率研究[J].电子器件,2025,48(2):243-249,7.基金项目
国家重点研发计划项目(2022YFE0122700) （2022YFE0122700）
北京东方计量测试研究所刘尚合院士专家工作站静电研究基金项目(BOIMTLSHJD20221004) （BOIMTLSHJD20221004）
