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一种采用瞬态增强电路的无片外电容LDO设计

程铁栋 黄颖 杨志凌 龙基智 徐振轩

电子器件2025,Vol.48Issue(2):257-262,6.
电子器件2025,Vol.48Issue(2):257-262,6.DOI:10.3969/j.issn.1005-9490.2025.02.004

一种采用瞬态增强电路的无片外电容LDO设计

Design of an Off-Chip Capacitor-Free LDO with Transient Enhancement Circuit

程铁栋 1黄颖 1杨志凌 2龙基智 2徐振轩1

作者信息

  • 1. 江西理工大学电气工程与自动化学院,江西 赣州 34100
  • 2. 优利德科技(中国)股份有限公司,广东 东莞 523429
  • 折叠

摘要

Abstract

A low dropout linear regulator(LDO)with transient enhancement circuit is proposed to improve the transient response of off-chip capacitor-free LDO.The LDO uses Miller compensation and active feedforward compensation technology to ensure that the LDO works steadily within the range of load current.At the same time,the transient enhancement circuit senses the transient change of load current,provides charging and discharging paths for the power transistor,and improves the transient response performance of the circuit.The circuit is designed based on 180 nm CMOS process.The simulation results show that in the load current range of 0 to 100 mA,the output voltage undershoot is reduced by 645 mV,or about 73%,and the overshoot voltage is reduced by 105 mV,or about 53%,compared to the LDO cir-cuit without the transient enhancement circuit.The load regulation of the circuit is 0.002 V/A,and the line regulation is 0.988 mV/V.

关键词

无片外电容/低压差线性稳压器/瞬态增强/密勒补偿/有源前馈补偿

Key words

off-chip capacitor-free/low dropout linear regulator/transient enhancement/Miller compensation/active feedforward com-pensation

分类

信息技术与安全科学

引用本文复制引用

程铁栋,黄颖,杨志凌,龙基智,徐振轩..一种采用瞬态增强电路的无片外电容LDO设计[J].电子器件,2025,48(2):257-262,6.

基金项目

江西省教育厅科学技术重点研究项目(GJJ200804) (GJJ200804)

江西理工大学博士启动基金项目(GJJ191206) (GJJ191206)

电子器件

1005-9490

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