首页|期刊导航|光:科学与应用(英文版)|Physisorption-assistant optoelectronic synaptic transistors based on Ta2NiSe5/SnS2 heterojunction from ultraviolet to near-infrared
Physisorption-assistant optoelectronic synaptic transistors based on Ta2NiSe5/SnS2 heterojunction from ultraviolet to near-infrared
Fan Tan Yahui Li Yanze Feng Chao Lin Yuquan Zheng Dabing Li Mario Lanza Shaojuan Li Chunlu Chang Nan Zhang Junru An Mingxiu Liu Xingyu Zhao Mengqi Che Zhilin Liu Yaru Shi
光:科学与应用(英文版)2025,Vol.14Issue(5):1278-1289,12.
光:科学与应用(英文版)2025,Vol.14Issue(5):1278-1289,12.DOI:10.1038/s41377-025-01792-3
Physisorption-assistant optoelectronic synaptic transistors based on Ta2NiSe5/SnS2 heterojunction from ultraviolet to near-infrared
Physisorption-assistant optoelectronic synaptic transistors based on Ta2NiSe5/SnS2 heterojunction from ultraviolet to near-infrared
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Fan Tan,Yahui Li,Yanze Feng,Chao Lin,Yuquan Zheng,Dabing Li,Mario Lanza,Shaojuan Li,Chunlu Chang,Nan Zhang,Junru An,Mingxiu Liu,Xingyu Zhao,Mengqi Che,Zhilin Liu,Yaru Shi..Physisorption-assistant optoelectronic synaptic transistors based on Ta2NiSe5/SnS2 heterojunction from ultraviolet to near-infrared[J].光:科学与应用(英文版),2025,14(5):1278-1289,12.基金项目
The authors acknowledge the support from the National Natural Science Foundation of China(grant Nos.62334010,62121005,62022081,and 62304221),the National Key Research and Development Program(grant number 2021YFA0717600),the Natural Science Foundation of Jilin Province(20240101377JC),and the International Fund Program of Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences. (grant Nos.62334010,62121005,62022081,and 62304221)