机电工程技术2025，Vol.54Issue(8)：33-37,5.DOI:10.3969/j.issn.1009-9492.2024.00098
基于干法刻蚀和湿法腐蚀方法的GaN纳米柱阵列制备研究
Preparation of GaN Nanopillar Arrays Based on Dry Etching and Wet Etching Methods
摘要
Abstract
The fabrication of periodically ordered high aspect ratio GaN nanoarrays can effectively improve the light absorption and extraction of optoelectronic devices.GaN nanopillar arrays with high aspect ratio are prepared by polystyrene colloidal spheres(PS spheres)and dielectric mask etching,and tetramethylammonium hydroxide(TMAH)corrosion-assisted methods.During the preparation process,the etching selection ratio of the mask layer determines the height and morphology of the nanopillars,and the inductively coupled plasma etching(ICP)parameters and TMAH corrosion time affect the morphology of the nanopillars.The effects of the selection ratio of different mask layers,the flow rate and type of ICP gas,and the TMAH corrosion time on the morphology of the nanopillars are studied,and the process is optimized and adjusted.Scanning electron microscopy(SEM)is used to characterize the morphology of nanopillars,and the analysis shows that:(1)the combination of PS spheres,100 nm silicon nitride and 20 nm nickel masks have the highest selection ratio,and high aspect ratio nanopillars with diameter to height ratios greater than 1∶5 are successfully prepared;(2)the optimal parameters of ICP etching are 64 sccm chlorine,8 sccm boron trichloride,ICP power 100 W,BIAS power 70 W,cavity pressure 0.6 Pa,etching rate of about 90 nm/min,and sidewall inclination angle of about 80°;(3)the side wall of the nanopillar will become vertically smooth with the corrosion time of TMAH,the corrosion time is not enough,the sidewall is a stepped step,the corrosion time is too long,the nanopillar falls off from the bottom,the optimal corrosion time is 30 min,and the wet chemical corrosion behavior is explained from the atomic structure.关键词
GaN/纳米柱阵列/聚苯乙烯胶体球/刻蚀掩膜/TMAHKey words
GaN/nanopillar arrays/polystyrene colloidal balls/etching masks/TMAH分类
电子信息工程引用本文复制引用
杨丽艳,冯林,谢婷,邹继军,邓文娟..基于干法刻蚀和湿法腐蚀方法的GaN纳米柱阵列制备研究[J].机电工程技术,2025,54(8):33-37,5.基金项目
江西省科技厅重点研发项目(20203BBE53030) （20203BBE53030）
