有色金属材料与工程2025，Vol.46Issue(2)：1-8,8.DOI:10.13258/j.cnki.nmme.20250312001
纳米CeO2磨料在化学机械抛光中的研究进展
Research progress on nano-CeO2 abrasive in chemical mechanical polishing
摘要
Abstract
Chemical mechanical polishing(CMP)is the core process for achieving global planarization in integrated circuit manufacturing,and nano-CeO2 has become one of the key abrasives in the CMP field due to its high material removal rate,low surface damage,and high selectivity.The synthesis methods,property regulation,the influences on polishing performance and action mechanism of nano-CeO2 abrasives were reviewed.In synthesis methods,hydrothermal synthesis method,precipitation method,and sol-gel method can all prepare nano-CeO2 abrasives with uniform particle sizes and less agglomeration by controlling synthesis conditions.The particle size of nano-CeO2 abrasives synergistically affects the polishing efficiency through multiple effects,while morphology and structure have significant effects on the surface roughness and scratch depth.Increasing the concentration of Ce3+of the nano-CeO2 abrasives by doping or reduction treatment can enhance their chemical activity and improve the polishing performance.The analysis of the action mechanism indicates that the nano-CeO2 abrasive promotes the hydrolysis of silicon-based material surfaces to generate a soft layer by forming Ce―O―Si bonds,and achieves efficient planarization through mechanical grinding.关键词
化学机械抛光/纳米CeO2磨料/合成方法/性质调控/作用机制Key words
chemical mechanical polishing/nano-CeO2 abrasive/synthesis methods/property regulation/action mechanism分类
化学工程引用本文复制引用
王旭,李鑫,邱名健,倪一鸣,刘明仁,张栋梁,赵延,周薇,王觅堂..纳米CeO2磨料在化学机械抛光中的研究进展[J].有色金属材料与工程,2025,46(2):1-8,8.基金项目
国家重点研发计划资助项目(2023YFB3507100) （2023YFB3507100）
内蒙古自治区科技重大专项(2019ZD023 （）
2021ZD0028) （）
