人工晶体学报2025，Vol.54Issue(5)：857-863,7.DOI:10.16553/j.cnki.issn1000-985x.2024.0283
p型TBC电池发射极制备工艺
Preparation Process of Emitter for p-Type TBC Cells
宋志成 1张博 2张春福 3屈小勇 2倪玉凤 2高嘉庆2
作者信息
- 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071||青海黄河上游水电开发有限责任公司,西宁 810000
- 2. 青海黄河上游水电开发有限责任公司西安太阳能电力分公司,西安 710000
- 3. 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071
- 折叠
摘要
Abstract
Introducing the tunneling oxide passivated contact(TOPCon)structure into the back contact solar cells structure,a tunneling oxide passivated contact back contact(TBC)solar cell was prepared,which can effectively suppress the recombination of electrons and holes,and improve the photoelectric conversion efficiency.This article focuses on the preparation process of the emitter of p-type TBC solar cells,and deeply studies the preparation process and passivation performance of n-type tunneling oxide passivation contact structures(n-TOPCon)on p-type silicon wafers.Through experiments,the influence of oxidation time on the thickness of the oxide layer during the growth process of the tunneling oxide layer was studied,and the effect of different thicknesses of tunneling oxide layers on the passivation of the emitter n-TOPCon structure was investigated.The experimental results show that at an oxidation temperature of 600℃and an oxidation time of 1 200 s,the tunneling oxide layer thickness reaches 1.52 nm,and the optimal passivation performance could be obtained.At this time,the hidden implied open circuit voltage reaches 733 mV,corresponding to J0 of 4.41 fA/cm2.Afterwards,the doping distribution curve and passivation performance of n-TOPCon emitter under different phosphorus diffusion temperatures and phosphorus source flow rates were studied.When the diffusion temperature reaches 870℃,the implied open circuit voltage of n-TOPCon can be increased to 736 mV.As the diffusion temperature increases,the implied open circuit voltage of the emitter n-TOPCon structure begins to decrease.Finally,the relationship between the passivation performance of n-TOPCon structure and N2-POCl3 flow rate was studied under the same diffusion temperature.Through experiments,it is found that with the increase of diffusion N2-POCl3 flow rate,the passivation performance of n-TOPCon structure first improve and then decrease.According to the test results,when the N2-POCl3 flow rate is 3 000 sccm,the hidden open circuit voltage of n-TOPCon structure can be increased to 740 mV.关键词
p型TBC电池/磷扩散/LPCVD/掺杂/钝化性能Key words
p-type TBC cell/phosphorus diffusion/LPCVD/doping/passivation performance分类
信息技术与安全科学引用本文复制引用
宋志成,张博,张春福,屈小勇,倪玉凤,高嘉庆..p型TBC电池发射极制备工艺[J].人工晶体学报,2025,54(5):857-863,7.
