人工晶体学报2025，Vol.54Issue(5)：737-756,20.DOI:10.16553/j.cnki.issn1000-985x.2024.0309
宽禁带半导体碳化硅基核辐射探测器研究进展
Research Progress of Wide Band Gap Semiconductor Silicon Carbide Based Nuclear Radiation Detector
摘要
Abstract
Silicon carbide(SiC)semiconductor material has many outstanding advantages such as wide band gap,large crystal atom departure threshold energy and high electron hole migration rate.The SiC based nuclear radiation detector has the advantages of high temperature resistance,high radiation resistance,small size and fast response.The continuous improvements of high quality,large size SiC crystal materials growth,epitaxial growth technology and device preparation technologis have greatly promoted the development of SiC based nuclear radiation detectors.This paper starts with the principle and performance evaluation index of SiC nuclear radiation detector,analyzes the interaction mode and main performance index of SiC material with various radiation particles during radiation detection,and the relationship between main performance index and SiC crystal defects,etc.Based on the physical properties of SiC crystal,the preparation and epitaxial growth methods of SiC crystal substrate at the detector level are summarized and compared.The latest research progress of SiC charged particle detector,neutron detector and X/γ detector are introduced,and the challenges in the development of SiC based nuclear radiation detector are analyzed,which provide a reference for improving the performance of SiC based nuclear radiation detector.关键词
碳化硅/宽禁带半导体/半导体核辐射探测器/单晶生长/外延生长Key words
silicon carbide/wide band gap semiconductor/semiconductor nuclear radiation detector/single crystal growth/epitaxial growth分类
数理科学引用本文复制引用
杜青波,杨亚鹏,高旭东,张智,赵晓宇,王惠琦,刘轶尔,李国强..宽禁带半导体碳化硅基核辐射探测器研究进展[J].人工晶体学报,2025,54(5):737-756,20.基金项目
山西省基础研究计划青年科学研究项目(202303021212384) （202303021212384）
