现代应用物理2025，Vol.16Issue(2)：124-132,9.DOI:10.12061/j.issn.2095-6223.202402012
不同发射极电流下双极晶体管中子辐照后瞬时电离辐射效应试验研究
Transient Ionizing Effect of Neutron-Irradiated Bipolar Transistor With Different Emitter Currents
摘要
Abstract
To study the difference in transient ionizing radiation photocurrent response after neutron irradiation on bipolar transistors with different emitter currents,the transient ionizing radiation effect experiments on 2N2222A bipolar transistor are performed on the"Qiangguang-Ⅰ"accelerator after the transistors are irradiated at Xi'an Pulsed Reactor with constant emitter current of 0,0.306 and 3.37 mA under the neutron flux of 1 × 1012,5 × 1012,1 × 1013 and 5×1013 cm-2,respectively.The transient dose rate can be adjusted by the distance between transistor and the accelerator target surface,and the photocurrent duration is taken as the main index to evaluate the difference in transient ionizing radiation photocurrent response of bipolar transistors.The experimental results show that when the dose rate exceeds about 1 × 109 Gy·s-1,the transient ionizing radiation photocurrent duration decreases gradually with the increase of constant emitter current under neutron pre-irradiation,and the greater the dose rate,the more obvious the response difference.When the dose rate is less than about 1 × 109 Gy·s-1,the variation of constant emitter current under neutron pre-irradiation has no significant effect on transient ionizing radiation photocurrent duration.The analysis indicates that the difference of photocurrent duration after neutron irradiation with different emitter currents in 2N2222A bipolar transistor is mainly related to the magnitude of transient dose rate.Based on the transient photocurrent analytical model,the variation trend of transistor parameters with transient dose rate is obtained,and the relationship between difference in photocurrent duration and transient dose rate of bipolar transistors after neutron irradiation with different emitter currents is analyzed.In addition,experiments are also conducted on a designed integrated NPN bipolar transistor.The results show that even if the transient dose rate is at a high level,there is still no obvious difference in transient ionizing radiation photocurrent response after neutron irradiation with different emitter current of integrated NPN bipolar transistor.关键词
双极晶体管/中子位移损伤/瞬时电离辐射/光电流响应Key words
bipolar transistor/neutron displacement damage/transient ionizing radiation/photocurrent response分类
信息技术与安全科学引用本文复制引用
刘炜剑,李瑞宾,王桂珍,白小燕,金晓明,刘岩,齐超,王晨辉,李俊霖..不同发射极电流下双极晶体管中子辐照后瞬时电离辐射效应试验研究[J].现代应用物理,2025,16(2):124-132,9.基金项目
国家自然科学基金资助项目(11835006) （11835006）
强脉冲辐射环境模拟与效应国家重点实验室基金资助项目(SKLIPR2202) （SKLIPR2202）
