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一种基于终端扩展结构的高场强平面碳化硅光导器件仿真研究

刘福印 王朗宁 何婷 曾玲珑 王日品 牛昕玥 易木俣 荀涛

现代应用物理2025,Vol.16Issue(2):133-140,8.
现代应用物理2025,Vol.16Issue(2):133-140,8.DOI:10.12061/j.issn.2095-6223.202403017

一种基于终端扩展结构的高场强平面碳化硅光导器件仿真研究

Simulation of High-Field Lateral Silicon Carbide Photoconductive Devices With Terminal-Extension Structure

刘福印 1王朗宁 1何婷 1曾玲珑 1王日品 1牛昕玥 1易木俣 1荀涛1

作者信息

  • 1. 国防科技大学前沿交叉学科学院,长沙 410073
  • 折叠

摘要

Abstract

As a type of the struture of photoconductive devices,the performance of lateral photoconductive devices have long been constrained by inter-electrode flashover and dielectric breakdown.To improve the working voltage of photoconductive devices,terminal-extension electric field shielding structure is proposed in this paper.Specifically,p-type/n-type SiC high-conductivity layers are epitaxially grown beneath the anode and cathode of the device.This design achieves dynamic homogenization of the internal electric field through dual mechanisms:enlarging electrode curvature radius and introducing a reverse charge compensation electric field.Based on TCAD numerical simulation software,systematic analyses are conducted to investigate how critical parameters,including curvature radius,SiC layer doping concentration,and thickness,affect the optimization of the on-state peak electric field and maximum current density.The simulation results show that the terminal extension structure can effectively homogenize the dynamic peak electric field inside the device and alleviate current accumulation.In the case of a 1 mm electrode gap with a peak power of 100 kW·mm-2 and a bias electric field of 100 kV·cm-1,compared to the original device,the optimized device can reduce the maximum electric field and maximum current density by 90%and 81%,respectively,while reducing the conduction resistance by 26%.The terminal extension structure can provide a reference scheme for improving the on-state breakdown voltage of lateral photoconductive devices.

关键词

SiC/光电导半导体开关/平面器件/终端结构/半导体仿真

Key words

silicon carbide/photoconductive semiconductor switch/lateral device/terminal structure/semiconductor simulation

分类

信息技术与安全科学

引用本文复制引用

刘福印,王朗宁,何婷,曾玲珑,王日品,牛昕玥,易木俣,荀涛..一种基于终端扩展结构的高场强平面碳化硅光导器件仿真研究[J].现代应用物理,2025,16(2):133-140,8.

基金项目

国家自然科学基金资助项目(62071477,62101577) (62071477,62101577)

现代应用物理

2095-6223

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