现代应用物理2025，Vol.16Issue(2)：162-168,7.DOI:10.12061/j.issn.2095-6223.202408016
典型相关双采样电路瞬时剂量率辐射效应时序敏感性
Timing Sensitivity of the Transient Dose Rate Radiation Effect on Typical Correlation Double Sampling Circuit
摘要
Abstract
This paper investigates the transient dose rate radiation effects(TDRE)on correlated double sampling(CDS)circuits using a double-exponential current source fault injection method.By analyzing operational timing,the variations of the reset signal and sampling signal of a 4T pixel unit after CDS processing are evaluated under different dose rates and injection timings.The study reveals that the occurrence timing of TDRE is a critical factor influencing the performance of the CDS circuit.At lower dose rates,the CDS circuit retains its basic functionality,with minor variations in the reset signal and sampling signal(approximately 5％),while exhibiting low sensitivity to fault injection timing.In contrast,under higher dose rate conditions,the sampling signal shows strong sensitivity to injection timing,resulting in two distinct states:maintained sampling functionality or complete failure.This paper introduces the significant uncertainty to the imaging quality of CMOS image sensors.The findings provide valuable insights and references for subsequent research on evaluating the overall radiation response of CMOS image sensors.关键词
相关双采样电路/剂量率辐射效应/双指数电流源/故障注入Key words
correlated double sampling/transient dose rate radiation effect/dual exponential current source/fault injection分类
能源科技引用本文复制引用
伏琰军,韦源,左应红,朱金辉,牛胜利..典型相关双采样电路瞬时剂量率辐射效应时序敏感性[J].现代应用物理,2025,16(2):162-168,7.基金项目
国家重点研发计划资助项目(2020YFA0709800) （2020YFA0709800）
