中山大学学报（自然科学版）（中英文）2025，Vol.64Issue(3)：103-108,6.DOI:10.13471/j.cnki.acta.snus.ZR20250041
α-In2Se3铁电沟道场效应晶体管及其突触性能
Two-dimensional ferroelectric α-In2Se3 channel transistors and their synaptic properties
摘要
Abstract
Two-dimensional ferroelectric α-In2Se3 was fabricated using the mechanical exfoliation method,and the structural characteristics of the samples were analyzed by atomic force microscopy(AFM).Ferroelectric channel transistors with α-In2Se3 as the channel were prepared by electron beam lithography.This work reveals that the out-of-plane polarization of α-In2Se3 can be effectively modulated by applying electrical pulses to the top-gate electrode,enabling the short-term plasticity(STP)through synaptic potentiation and depression.Significantly,cumulative gate voltage pulses amplify the ferroelectric polarization in the channel via domain alignment dynamics,resulting in a progressive enhancement of synaptic current,which facilitates transition from STP to long-term plasticity(LTP).Furthermore,the tunable LTP characteristics modified by pulse amplitude engineering demonstrate the capability of α-In2Se3 device to emulate complex synaptic learning rules.关键词
机械剥离法/α-In2Se3二维铁电材料/面外极化/铁电沟道场效应晶体管/突触晶体管Key words
mechanical exfoliation/two-dimensional ferroelectric α-In2Se3/out-of-plane ferroelectricity/ferroelectric channel transistors/synaptic transistors分类
通用工业技术引用本文复制引用
胡辰,彭松昂..α-In2Se3铁电沟道场效应晶体管及其突触性能[J].中山大学学报（自然科学版）（中英文）,2025,64(3):103-108,6.基金项目
科技创新2030-"脑科学与类脑研究"重大项目(2022ZD0209200) （2022ZD0209200）
