首页|期刊导航|半导体学报(英文版)|Fatigue of ferroelectric field effect transistor:mechanisms and optimization strategies
半导体学报(英文版)2025,Vol.6Issue(6):20-33,14.DOI:10.1088/1674-4926/24100010
Fatigue of ferroelectric field effect transistor:mechanisms and optimization strategies
Fatigue of ferroelectric field effect transistor:mechanisms and optimization strategies
摘要
关键词
FeFET/fatigue/charge trapping/trap generationKey words
FeFET/fatigue/charge trapping/trap generation引用本文复制引用
Yu Song,Tiancheng Gong,Yang Yang,Eskilla Venkata Ramana,Qing Luo,Pengfei Jiang,Pan Xu,Xueyang Peng,Qianqian Wei,Qingyi Yan,Wei Wei,Yuan Wang,Xiao Long..Fatigue of ferroelectric field effect transistor:mechanisms and optimization strategies[J].半导体学报(英文版),2025,6(6):20-33,14.基金项目
This work was supported in part by the National Natural Science Foundation of China(NSFC)under Grant 62304246,62404246,62425407 (NSFC)
the Ministry of Science and Technology(MOST)of China under Grant 2022YFB3608400 (MOST)
the Young Elite Scientists Sponsorship Program by the China Associa-tion for Science and Technology(CAST)under Grant 2022QNRC001 (CAST)
and the Youth Innovation Promotion Associa-tion of Chinese Academy of Sciences under Grant 2020120,2023127. ()