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Complementary inverter based on ZnO thin-film transistors

Dunan Hu Genyuan Yu Ruqi Yang Honglie Lin Jianguo Lu

半导体学报（英文版）2025，Vol.6Issue(6)：105-110,6.

半导体学报（英文版）2025，Vol.6Issue(6)：105-110,6.DOI:10.1088/1674-4926/24090040

Dunan Hu ¹Genyuan Yu ²Ruqi Yang ¹Honglie Lin ¹Jianguo Lu¹

作者信息

1. State Key Laboratory of Silicon and Advanced Semiconductor Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310058,China
2. Hebei Semiconductor Research Institute,Shijiazhuang 050051,China
折叠

complementary inverter/thin-film transistor/ZnO/n-type channel/p-type channel

complementary inverter/thin-film transistor/ZnO/n-type channel/p-type channel

Dunan Hu,Genyuan Yu,Ruqi Yang,Honglie Lin,Jianguo Lu..Complementary inverter based on ZnO thin-film transistors[J].半导体学报（英文版）,2025,6(6):105-110,6.

This study was supported by Zhejiang Provincial Natural Science Foundation of China(No.LZ24E020001). （No.LZ24E020001）

ISSN：1674-4926

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