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2-inch diameter(010)principal-face β-Ga2O3 single crystals grown by EFG method

Xuyang Dong Wenxiang Mu Pei Wang Yue Dong Hao Zhao Boyang Chen Zhitai Jia Xutang Tao

半导体学报（英文版）2025，Vol.6Issue(6)：120-128,9.

半导体学报（英文版）2025，Vol.6Issue(6)：120-128,9.DOI:10.1088/1674-4926/24110029

2-inch diameter(010)principal-face β-Ga2O3 single crystals grown by EFG method

Xuyang Dong ¹Wenxiang Mu ¹Pei Wang ¹Yue Dong ¹Hao Zhao ¹Boyang Chen ¹Zhitai Jia ²Xutang Tao¹

作者信息

1. State Key Laboratory of Crystal Materials,Institute of novel semiconductors,Shandong University,Jinan 250100,China
2. State Key Laboratory of Crystal Materials,Institute of novel semiconductors,Shandong University,Jinan 250100,China||Shandong Research Institute of Industrial Technology,Jinan 250100,China
折叠

摘要

关键词

β-Ga2O3/EFG/(010)principal-face single crystal

Key words

β-Ga2O3/EFG/(010)principal-face single crystal

引用本文复制引用

Xuyang Dong,Wenxiang Mu,Pei Wang,Yue Dong,Hao Zhao,Boyang Chen,Zhitai Jia,Xutang Tao..2-inch diameter(010)principal-face β-Ga2O3 single crystals grown by EFG method[J].半导体学报（英文版）,2025,6(6):120-128,9.

基金项目

The authors gratefully acknowledge the support by the fund of the National Natural Science Foundation of China(NSFC)(Grant No.U23A20358,51932004),Key-Area Research and Development Program of Guangdong Province(Grant No.2020B010174002),Natural Science Foundation of Shan-dong Province(Grant No.ZR2023ZD05,2022TSGC2120),the Shenzhen Fundamental Research Program(Grant No.GJHZ20220913142605011),and the 111 Project 2.0(Grant No.BP2018013).Laboratory Construction and Management Research Project of Shandong University(Grant No.sy20233203) （NSFC）

半导体学报（英文版）

ISSN：1674-4926

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