发光学报2025，Vol.46Issue(5)：753-769,17.DOI:10.37188/CJL.20240331
氧化锌基忆阻器件研究进展
Recent Progress in ZnO-based Memristive Devices
摘要
Abstract
Memristors have potential in high-efficiency information processing and synaptic function simulation due to their high density,low power consumption and continuously adjustable resistance.Zinc oxide is an ideal choice for memristor with high performance due to its various preparation methods,exciton stability and biocompatibility.Herein,the recent research progress of ZnO-based memristive device is reviewed,including memristive behaviors and mechanism,the cognitive functions of synapse simulated by analog-type memristor as well as functionality and applications.We first review the switching-type and corresponding memristive mechanism,including electronic memristors and optoelectronic memristors.Then,the cognitive functions of synapse including synaptic plasticity and learning experience are introduced.Moreover,we exhibit the applications of ZnO-based memristive device in logic operation,pattern recognition and multimodal in-sensor computing.Finally,we summarize the advantages/challeng-es of ZnO-based memristor and prospect the future development.关键词
氧化锌/忆阻器/光电忆阻器/人工突触Key words
zinc oxide/memristor/optoelectronic memristor/artificial synapse分类
物理学引用本文复制引用
史佳娟,单旋宇,王中强,徐海阳,刘益春..氧化锌基忆阻器件研究进展[J].发光学报,2025,46(5):753-769,17.基金项目
国家重点研发计划(2023YFB4402301) Supported by National Key R&D Program of China(2023YFB4402301) （2023YFB4402301）
